Product Summary

The SUD50P04-15-E3 is a P-Channel 40-V (D-S), 175℃ MOSFET.

Parametrics

SUD50P04-15-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: –40V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current ID: –50A at TC = 25℃; -40A at TC = 100℃; (4)Pulsed Drain Current IDM: –150A; (5)Continuous Source Current (Diode Conduction) IS: –50A; (6)Maximum Power Dissipation PD: 100W at TC = 25℃; 3W at TA = 25℃; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 175℃.

Features

SUD50P04-15-E3 specification: (1)Drain-Source Breakdown Voltage V(BR)DSS: –40V; (2)Gate Threshold Voltage VGS(th): –1.0V; (3)Gate-Body Leakage IGSS: ±100 nA; (4)Zero Gate Voltage Drain Current IDSS: –1μA; (5)On-State Drain Current ID(on): –120 A; (6)Drain-Source On-State Resistance rDS(on): 0.012 to 0.015Ω; (7)Forward Transconductance gfs: 20S.

Diagrams

SUD50P04-15-E3 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SUD50P04-15-E3
SUD50P04-15-E3

Vishay/Siliconix

MOSFET 40V 50A 100W

Data Sheet

0-1: $2.44
1-10: $1.75
10-100: $1.65
100-250: $1.47
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SUD50N02-04P
SUD50N02-04P

Vishay/Siliconix

MOSFET 20V 34A 8.3W

Data Sheet

Negotiable 
SUD50N02-04P-E3
SUD50N02-04P-E3

Vishay/Siliconix

MOSFET 20V 34A 8.3W

Data Sheet

0-1: $0.81
1-10: $0.64
10-100: $0.57
100-250: $0.50
SUD50N02-06
SUD50N02-06

Vishay/Siliconix

MOSFET 20V 30A 100W

Data Sheet

Negotiable 
SUD50N02-06-E3
SUD50N02-06-E3

Vishay/Siliconix

MOSFET 20V 30A 100W

Data Sheet

Negotiable 
SUD50N02-06P
SUD50N02-06P

Other


Data Sheet

Negotiable 
SUD50N02-06P-E3
SUD50N02-06P-E3

Vishay/Siliconix

MOSFET 20V 26A 65W

Data Sheet

0-1: $0.95
1-10: $0.86
10-100: $0.77
100-250: $0.74