(Hong Kong)
Product Summary
The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power gain with very low-noise figures. The 2SC3585 employs direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values.
Parametrics
2SC3585 absolute maximum ratings: (1)Collector to Base Voltage:20 V; (2)Collector to Emitter Voltage:10 V; (3)Emitter to Base Voltage:1.5 V; (4)Collector Current:35 mA; (5)Total Power Dissipation:200 mW; (6)Junction Temperature:150℃; (7)Storage Temperature:-65 to +150℃.
Features
2SC3585 features: (1)NF 1.8 dB TYP. @f = 2.0 GHz; (2)Ga 9 dB TYP. @f = 2.0 GHz.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 2SC3585 |
Other |
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Data Sheet |
Negotiable |
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2SC3585-T1B R43 |
Other |
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Data Sheet |
Negotiable |
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2SC3585-T1B R44 |
Other |
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Data Sheet |
Negotiable |
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2SC3585-T1B-A R44 |
Other |
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Data Sheet |
Negotiable |
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