Product Summary

The FQA65N20 is an N-Channel enhancement mode power field effect transistor. It is produced using Fairchild proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQA65N20 is well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.

Parametrics

FQA65N20 absolute maximum ratings: (1)VDSS Drain-Source Voltage: 200 V; (2)ID Drain Current - Continuous (TC = 25℃): 65 A; - Continuous (TC = 100℃): 41 A; (3)IDM Drain Current - Pulsed: 260 A; (4)VGSS Gate-Source Voltage: ±30 V; (5)EAS Single Pulsed Avalanche Energy: 1010 mJ; (6)IAR Avalanche Current: 65 A; (7)EAR Repetitive Avalanche Energy: 31 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 5.5 V/ns; (9)PD Power Dissipation (TC = 25℃): 310 W; - Derate above 25℃: 2.5 W/℃; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 ℃; (11)TL Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds: 300 ℃.

Features

FQA65N20 features: (1)65A, 200V, RDS(on) = 0.032Ω@VGS = 10 V; (2)Low gate charge ( typical 170 nC); (3)Low Crss ( typical 90 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQA65N20 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FQA65N20
FQA65N20

Fairchild Semiconductor

MOSFET 200V N-Channel QFET

Data Sheet

0-220: $2.46
220-250: $2.22
250-500: $1.99
500-1000: $1.68
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FQA65N20
FQA65N20

Fairchild Semiconductor

MOSFET 200V N-Channel QFET

Data Sheet

0-220: $2.46
220-250: $2.22
250-500: $1.99
500-1000: $1.68
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Data Sheet

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