Product Summary

The SPP20N60C3XK is a cool MOS power transistor.

Parametrics

SPP20N60C3XK absolute maximum ratings: (1)Continuous drain current ID: 20.7A at TC=25℃; 13.1A at TC=100℃; (2)Pulsed drain current, tp limited by Tjmax ID puls: 62.1A; (3)Avalanche energy, single pulse ID=10A, VDD=50V EAS: 690mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax ID=20A, VDD=50V EAR: 1mJ; (5)Avalance current, repetitive tAR limited by Tjmax IAR: 20A; (6)Gate source voltage static VGS: ±20V; (7)Gate source voltage AC(f>1Hz) VGS: ±30V; (8)Power dissipation, TC = 25℃ Ptot: 208W; (9)Operating and storage temperature Tj, Tstg: -55 to +150℃; (10)Reverse diode dv/dt dv/dt: 15 V/ns.

Features

SPP20N60C3XK features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)High peak current capability; (7)Improved transconductance; (8)PG-TO-220-3-31: Fully isolated package(2500VAC, 1minute); (9)Pb-free lead plating: RoHS compliant; (10)Qualified according to JEDEC for target applications.

Diagrams

SPP20N60C3XK diagram

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